|
No. |
Part ID |
Polarity |
BVGS [V] |
VTH[V] |
BVDSS [V] |
ID[A] TC=25°C |
RDON Max. [mohm] @ TC=25°C (A) |
Package |
Production Status |
|
|
|
|
|
|
|
|
|
|
Vgs=10V |
Vgs=4.5V |
Vgs=2.5V |
|
|
|
1 |
VS2301AT |
PMOS |
±12 |
-0.5~-1.5 |
-20 |
-4.2 |
-- |
95 |
120 |
SOT-23 |
Full production |
|
2 |
VS2301AL |
PMOS |
±12 |
-0.5~-1.5 |
-20 |
-4.2 |
-- |
95 |
120 |
SOT-23-3L |
Full production |
|
3 |
VS2301BT |
PMOS |
±12 |
-0.5~-1.5 |
-20 |
-2.8 |
-- |
95 |
120 |
SOT-23 |
Full production |
|
4 |
VS3401AT |
PMOS |
±12 |
-0.5~-1.5 |
-30 |
-2.8 |
75 |
90 |
120 |
SOT-23 |
Full production |
|
5 |
VS3401AL |
PMOS |
±12 |
-0.5~-1.5 |
-30 |
-4.2 |
75 |
90 |
120 |
SOT23-3L |
Full production |
|
6 |
VS3407AT |
PMOS |
±20 |
-1~-2 |
-30 |
-4.2 |
75 |
90 |
120 |
SOT-23 |
Coming Soon |
|
7 |
VS3407AL |
PMOS |
±20 |
-1~-2 |
-30 |
-4.2 |
75 |
90 |
120 |
SOT23-3L |
Coming Soon |
|
8 |
VS9435AS |
PMOS |
±20 |
-0.9~-2.0 |
-30 |
-4.9 |
60 |
90 |
-- |
SOP8 |
Full production |
|
9 |
VS4953AS |
Dual-PMOS |
±20 |
-0.9~-2.0 |
-30 |
-4.9 |
60 |
90 |
-- |
SOP8 |
Full production |
|
10 |
VS4503AS |
P+NMOS |
±20 |
1~2 |
±30 |
±8 |
18 |
28 |
-- |
SOP8 |
Full production |
|
11 |
VS4503DP |
P+NMOS |
±20 |
1~2 |
±30 |
±8 |
18 |
28 |
-- |
DFN5X6 |
Full production |
|
12 |
VS2302AT |
NMOS |
±20 |
0.4-1.0 |
20 |
3 |
45 |
65 |
85 |
SOT23 |
Full Production |
|
13 |
VS2300AT |
NMOS |
±12 |
0.5~1.5 |
20 |
5.6 |
-- |
32 |
65 |
SOT-23 |
Full production |
|
14 |
VS2300AL |
NMOS |
±20 |
0.5~1.5 |
20 |
5.2 |
32 |
40 |
-- |
SOT23-3L |
Full production |
|
15 |
VS8205AS |
Dual-NMOS |
±12 |
0.4~1.2 |
20 |
6 |
-- |
25 |
40 |
SOT23-6 |
Full production |
|
16 |
VS8205ATS |
Dual-NMOS |
±12 |
0.4-1.2 |
20 |
6 |
-- |
25 |
40 |
TSSOP8 |
Full production |
|
17 |
VS8810AL |
NMOS |
±12 |
0.6~1.8 |
20 |
7 |
20 |
23 |
28 |
SOT-23-3L |
Full production |
|
18 |
VS8810ATS |
Dual-NMOS |
±12 |
0.6~1.8 |
20 |
7 |
20 |
23 |
28 |
TSSOP8 |
Full production |
|
19 |
VS2598AD |
NMOS |
±20 |
1~3 |
30 |
98 |
4 |
5 |
8 |
TO-252 |
Full production |
|
20 |
VS2598AI |
NMOS |
±20 |
1~3 |
30 |
98 |
4 |
5 |
8 |
TO-251 |
Full production |
|
21 |
VS2598AP |
NMOS |
±20 |
1~3 |
30 |
98 |
4 |
5 |
8 |
DFN5X6 |
Full production |
|
22 |
VS3400AT |
NMOS |
±12 |
0.6~1.3 |
30 |
5.8 |
30 |
40 |
-- |
SOT-23 |
Full production |
|
23 |
VS3400AL |
NMOS |
±12 |
0.6~1.3 |
30 |
5.8 |
30 |
40 |
-- |
SOT-23-3L |
Full production |
|
24 |
VS3038AO |
NMOS |
±20 |
1~3 |
30 |
8 |
22 |
40 |
-- |
SOP8 |
Full production |
|
25 |
VS3018AD |
NMOS |
±12 |
0.6~1.8 |
30 |
16 |
30 |
40 |
-- |
TO-252 |
Full production |
|
26 |
VS3038AI |
NMOS |
±20 |
1~3 |
30 |
30 |
22 |
40 |
-- |
TO-251 |
Full production |
|
27 |
VS3038AD |
NMOS |
±20 |
1~3 |
30 |
30 |
22 |
40 |
-- |
TO-252 |
Full production |
|
28 |
VS3060AD |
NMOS |
±20 |
1~3 |
30 |
60 |
10 |
12 |
-- |
DFN5X6 |
Engineering |
|
29 |
VS3060AI |
NMOS |
±20 |
1~3 |
30 |
60 |
10 |
12 |
-- |
TO-251 |
Engineering |
♦低导通电阻
♦快速切换
♦ 100 ％雪崩测试
♦重复性雪崩中允许多达TJMAX
♦无铅，符合RoHS标准
描述
VS3080AP由沟槽加工技术，旨在实现极低的导通电阻。这种设计的附加功能是150 °C交界处的工作温度，开关速度快，改进型重复雪崩额定值。这些特点结合起来，使这个设计一个非常有效和可靠的装置在汽车应用以及其他各种应用。
绝对最大额定值
超越“绝对最大额定值”，就可能造成永久性损坏设备。这些压力额定值只，以及设备在这些或超出了规范标明的任何其它条件下的功能操作不暗示。暴露于长时间在绝对最大额定条件下可能影响器件的可靠性。热电阻和功耗额定值
计量板下安装和静止空气条件。环境温度（TA ）为25 ° C，除非另有规定。
|
Symbol |
Parameter |
Rating |
Unit |
|
|
Common Ratings (TC=25°C Unless Otherwise Noted) |
||||
|
VGS |
Gate-Source Voltage |
±20 |
V |
|
|
V(BR)DSS |
Drain-Source Breakdown Voltage |
30 |
V |
|
|
TJ |
Maximum Junction Temperature |
150 |
°C |
|
|
TSTG |
Storage Temperature Range |
-55 to 150 |
°C |
|
|
IS |
Diode Continuous Forward Current |
TC =25°C |
90 |
A |
|
Mounted on Large Heat Sink |
||||
|
IDM |
Pulse Drain Current Tested (Sillicon Limit) |
TC =25°C |
320 |
A |
|
ID |
GS |
T =25°C |
90 |
A |
|
PD |
Maximum Power Dissipation |
TC =25°C |
62 |
W |
|
Rθ JC |
Thermal Resistance-Junction to Case |
1.98 |
°C/W |
|
|
Drain-Source Avalanche Ratings |
||||
|
EAS |
Avalanche Energy, Single Pulsed ② |
225 |
mJ |
|
Symbol |
Parameter |
Condition |
Min. |
Typ. |
Max. |
Unit |
|
|
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) |
|||||||
|
V(BR)DSS |
Drain-Source Breakdown Voltage |
VGS=0V ID=250μA |
30 |
-- |
-- |
V |
|
|
IDSS |
Zero Gate Voltage Drain Current(Tc=25℃) |
VDS=24V,VGS=0V |
-- |
-- |
1 |
μA |
|
|
Zero Gate Voltage Drain Current(Tc=125℃) |
VDS=24V,VGS=0V |
-- |
-- |
100 |
μA |
||
|
IGSS |
Gate-Body Leakage Current |
VGS=±20V,VDS=0V |
-- |
-- |
±100 |
nA |
|
|
VGS(TH) |
Gate Threshold Voltage |
VDS=VGS,ID=250μA |
1.2 |
2.0 |
2.8 |
V |
|
|
RDS(ON) |
Drain-Source On-State Resistance |
V =10V, I =40A |
-- |
4.0 |
5.5 |
mΩ |
|
|
RDS(ON) |
Drain-Source On-State Resistance |
V =4.5V, I =20A |
-- |
5.5 |
6.5 |
mΩ |
|
|
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) |
|||||||
|
Ciss |
Input Capacitance |
VDS=15V,VGS=0V, f=1MHz |
-- |
1650 |
-- |
pF |
|
|
Coss |
Output Capacitance |
-- |
210 |
-- |
pF |
||
|
Crss |
Reverse Transfer Capacitance |
-- |
155 |
-- |
pF |
||
|
Qg |
Total Gate Charge |
VGS=10V |
VDS=15V,ID=20A, VGS=10V |
-- |
36 |
-- |
nC |
|
VGS=4.5V |
|
18.5 |
|
nC |
|||
|
Qgs |
Gate-Source Charge |
-- |
5 |
-- |
nC |
||
|
Qgd |
Gate-Drain Charge |
-- |
8 |
-- |
nC |
||
|
Switching Characteristics |
|||||||
|
td(on) |
Turn-on Delay Time |
VDD=15V, ID=10A, RG=6.8Ω, VGS=10V |
-- |
13.5 |
-- |
nS |
|
|
tr |
Turn-on Rise Time |
-- |
15 |
-- |
nS |
||
|
td(off) |
Turn-Off Delay Time |
-- |
20 |
-- |
nS |
||
|
tf |
Turn-Off Fall Time |
-- |
14 |
-- |
nS |
||
|
Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated) |
|||||||
|
ISD |
Source-drain current(Body Diode) |
Tc=25℃ |
-- |
-- |
90 |
A |
|
|
VSD |
Forward on voltage |
ISD=60A,VGS=0V |
-- |
-- |
1.3 |
V |
|
|
trr |
Reverse Recovery Time |
Tj=25℃,Isd=30A,
VGS=0V
di/dt=100A/μs |
-- |
24 |
-- |
nS |
|
|
Qrr |
Reverse Recovery Charge |
|
13 |
-- |
nC |
①脉冲宽度≤300μs ;占空比≤ 2 ％ 。
②由TJMAX有限公司，开始温度TJ = 25 ° C，L = 0.5mH ， RG = 25Ω ， IAS = 30A ，V GS = 10V 。部分不推荐使用高于此值
③重复评级;脉冲宽度限制最大。结温度。
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