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Low Power Silicon BJT LNA for 1.9GHz

soothmusic
高工
2012-04-17 12:36:38     打赏
Low Power Silicon BJT LNA for 1.9GHz


关键词: Maxim, QuickChip, silicon bipolar, LNA, 1.9 GHz, QuickChip 9, semi-custom, ASIC, low noise amplifier, quick chip


Abstract: A two-stage 1.9GHz monolithic low-noise amplifier (LNA) with a measured noise figure of 2.3dB and an associated gain of 15dB was fabricated in a standard silicon bipolar transistor array. It dissipates 5.2mW from a 3V supply including the bias circuitry. Input return loss and isolation are -9dB and -20dB, respectively. 



 Low Power Silicon BJT LNA for 1.9GHz.pdf
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关键词： Power     Silicon     1.9GHz    

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