二极管参数中英文对照表
| 文字符号 | 中文 | English |
| IF(AV) | 正向平均电流(整流管) | mean foreard current (of diode) |
| IT(AV) | 通态平均电流 | mean on-state current |
| VRSM | 反向不重复峰值电压 | non-reetitive peak reverse voltage |
| VRRM | 反向重复峰值电压 | repetitive peak reverse voltage |
| VDSM | 断态不重复峰值电压 | non-repetitive peak off-state voltage |
| VDRM | 断态重复峰值电压 | repetitive peak off-state voltage |
| VFM | 正向峰值电压(整流管) | peak forward voltage (of diode) |
| VTM | 通态峰值电压 | peak on-state voltage |
| Tjm | 最高等效结温 | maximum virtual junction temperature |
| F | 紧固力 | mounting force |
| IRRM | 反向重复峰值电流 | repetitive peak reverse current |
| IDRM | 断态重复峰值电流 | repetitive peak of-state current |
| VGT | 门极触发电压 | gate trigger voltage |
| IGT | 门极触发电流 | gate trigger current |
| Rjc | 结壳热阻 | junction-case thermal resistance |
| Qrr | 反向恢复电荷 | reverse recovery charge |
| ITM | 通态峰值电流 | peak on-state current |
| IFM | 正向峰值电流(整流管) | peak forward current (of diode) |
| ITSM | 通态浪涌电流 | surge on-state current |
| dv/dt | 断态电压临界上升率 | critical rate of rise of off-state voltage |
| di/dt | 通态电流临界上升率 | critical rate of rise of on-state current |
| tgt | 门极控制开通时间 | gate controlled turn-on time |
| tq | 电路换向关断时间 | cricuit commutated turn-off time |
| IRMS | 通态方均根电流 | R.M.S. on-state current |
| (dv/dt)c | 换向电压临界上升率(双向晶闸管) | critical rate of rise of commutating voltage(of bi-directional thyristor) |
| trr | 反向恢复时间(二极管的) | reverse recovery time (of diode) |
| ton | 开通时间 | turn on time |
| ts | 存储时间 | storage time |
| tf | 下降时间 | fall time |
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